Semiconductor Arrangement with a Superjunction Transistor and a Further Device Integrated in a Common Semiconductor Body

ABSTRACT

A semiconductor arrangement includes a semiconductor body and a power transistor arranged in a first device region of the semiconductor body. The power transistor includes at least one source region, a drain region, and at least one body region, at least one drift region of a first doping type and at least one compensation region of a second doping complementary to the first doping type, and a gate electrode arranged adjacent to the at least one body region and dielectrically insulated from the body region by a gate dielectric. The semiconductor arrangement also includes a further semiconductor device arranged in a second device region of the semiconductor body. The second device region includes a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type. The further semiconductor device includes device regions arranged in the first semiconductor region.

TECHNICAL FIELD

Embodiments of the present invention relate to a semiconductorarrangement, in particular a semiconductor arrangement with a powertransistor and a further semiconductor device integrated in a commonsemiconductor body.

BACKGROUND

Power transistors, such as power MOSFETs or power IGBTs, are widely usedas electronic switches for switching electric loads, such as motors,actors, lamps, or the like. In many applications, load paths of twopower transistors are connected in series between terminals for positiveand negative supply potentials so as to form a half-bridge circuit,where the load is coupled to an output of the half-bridge. In ahalf-bridge circuit the transistor connected between output and aterminal for a negative supply potential is referred to as low-sidetransistor (low side switch), while the transistor connected between aterminal for the positive supply potential and the output is referred toas high-side transistor (high-side switch).

A power transistor is a voltage controlled device that can be controlledby a drive signal (drive voltage) received by a control terminal, whichin a MOSFET or an IGBT is a gate terminal. While the low-side transistorcan be controlled using a drive signal that is referenced to thenegative supply potential, driving the high-side transistor requires adrive signal that is either referenced to the positive supply potentialor to the electrical potential at the output terminal, where theelectrical potential at the output terminal may vary between thenegative supply potential and the positive supply potential, dependenton the switching state of the half-bridge. For driving the high-sidetransistor and the low-side transistor it is desirable to use a controlcircuit that generates control signals referenced to the negative supplypotential. While the control signal for the low-side switch may bedirectly used for driving the low-side transistor, a level shifter maybe required for shifting a signal level of the control signal for thehigh-side transistor to a suitable signal level for driving thehigh-side transistor or to a signal level suitable to be processed by adrive circuit for the high-side transistor.

A level shifter, however, may require a further power device, such as afurther transistor, that has a voltage blocking capability similar tothe voltage blocking capability of the low-side transistor.

Superjunction transistors are a specific type of power transistor thatinclude at least one drift region of one conductivity type and at leastone compensation region of an opposite conductivity type adjoining theat least one drift region.

In order to reduce manufacturing costs and to reduce the size there is aneed to implement a power transistor, such as a superjunctiontransistor, and a further device in a common semiconductor body.

SUMMARY

A first embodiment relates to a semiconductor arrangement. Thesemiconductor arrangement includes a semiconductor body, a powertransistor arranged in a first device region of the semiconductor body,and a further semiconductor device arranged in a second device region ofthe semiconductor body. The power transistor includes at least onesource region, a drain region, and at least one body region, at leastone drift region of a first doping type and at least one compensationregion of a second doping complementary to the first doping type, and agate electrode arranged adjacent to the at least one body region anddielectrically insulated from the body region by a gate dielectric. Thesecond device region includes a well-like structure of the second dopingtype surrounding a first semiconductor region of the first doping type.The further semiconductor device includes device regions arranged in thefirst semiconductor region.

A second embodiment relates to a half-bridge circuit, including alow-side transistor and a high-side transistor each comprising a loadpath and a control terminal, a high-side drive circuit comprising alevel shifter with a level shifter transistor, wherein the low-sidetransistor and the level shifter transistor are integrated in a commonsemiconductor body.

Those skilled in the art will recognize additional features andadvantages upon reading the following detailed description, and uponviewing the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

Examples will now be explained with reference to the drawings. Thedrawings serve to illustrate the basic principle, so that only aspectsnecessary for understanding the basic principle are illustrated. Thedrawings are not to scale. In the drawings the same reference charactersdenote like features.

FIG. 1 illustrates a vertical cross sectional view of a semiconductorarrangement including a power transistor implemented in a first deviceregion of a semiconductor body and a further semiconductor deviceimplemented in a second device region of the semiconductor body;

FIG. 2 illustrates a horizontal cross sectional view of thesemiconductor arrangement of FIG. 1;

FIG. 3 illustrates a horizontal cross sectional view of a semiconductorbody in the first device region according to a further embodiment;

FIG. 4 illustrates a vertical cross sectional view of a semiconductorarrangement according to a further embodiment;

FIG. 5 illustrates a vertical cross sectional view of a controlstructure of the power transistor according to a first embodiment;

FIG. 6 illustrates a vertical cross sectional view of a controlstructure of the power transistor according to a second embodiment;

FIG. 7 illustrates a vertical cross sectional view of a furthersemiconductor device implemented as a lateral transistor according to afirst embodiment;

FIG. 8 illustrates a vertical cross sectional view of a furthersemiconductor device implemented as a lateral transistor according to asecond embodiment;

FIG. 9 illustrates a horizontal cross sectional view of a furthersemiconductor device illustrated in FIG. 7 according to a firstembodiment;

FIG. 10 illustrates a horizontal cross sectional view of a furthersemiconductor device illustrated in FIG. 7 according to a secondembodiment;

FIG. 11 illustrates a horizontal cross sectional view of a furthersemiconductor device implemented as a lateral diode;

FIG. 12 illustrates an electrical circuit diagram of the powertransistor and a further semiconductor device, implemented as atransistor, integrated in the semiconductor body;

FIG. 13 illustrates an electrical circuit diagram of the powertransistor and two further semiconductor device, implemented as atransistor and a diode, integrated in the semiconductor body;

FIG. 14 illustrates an embodiment of a half-bridge circuit including alow-side transistor, a high-side transistor, a high-side drive circuitand a level-shifter transistor;

FIG. 15 illustrates the half-bridge circuit of FIG. 14 wherein oneembodiment of the high-side drive circuit is illustrated in detail.

DETAILED DESCRIPTION

In the following Detailed Description, reference is made to theaccompanying drawings, which form a part thereof, and in which is shownby way of illustration specific embodiments in which the invention maybe practiced. In this regard, directional terminology, such as “top”,“bottom”, “front”, “back”, “leading”, “trailing” etc., is used withreference to the orientation of the FIGs. being described. Becausecomponents of embodiments can be positioned in a number of differentorientations, the directional terminology is used for purposes ofillustration and is in no way limiting. It is to be understood thatother embodiments may be utilized and structural or logical changes maybe made without departing from the scope of the present invention. Thefollowing detailed description, therefore, is not to be taken in alimiting sense, and the scope of the present invention is defined by theappended claims. It is to be understood that the features of the variousexemplary embodiments described herein may be combined with each other,unless specifically noted otherwise.

FIG. 1 illustrates a vertical cross sectional view of a semiconductorarrangement including a semiconductor body 100 and active regions of apower transistor and a further semiconductor device implemented in thesemiconductor body 100. FIG. 1 shows a vertical cross sectional view ofthe semiconductor body 100, which is a cross sectional view in avertical section plane that extends perpendicular to a first surface 101and an opposite second surface 102 of the semiconductor body 100.

The semiconductor body 100 includes a first device region 110 in whichactive regions of a power transistor are implemented, and a seconddevice region 120 in which a further semiconductor device 50 isimplemented. The power transistor is implemented as a superjunctiontransistor and includes at least one drift region 11 of a first dopingtype and at least one compensation region 12 of a second doping typecomplementary to the first doping type. The power transistor illustratedin FIG. 1 includes a plurality of drift regions 11 and a plurality ofcompensation regions 12, where the drift regions 11 and the compensationregions 12 are arranged alternately in a lateral direction of thesemiconductor body 100. Further, the power transistor is a verticaltransistor, which means that a main current flow direction in the powertransistor corresponds to a vertical direction of the semiconductor body100. Thus, the drift region 11 and the compensation regions 12 extend inthe vertical direction of the semiconductor body 100.

The power transistor further includes a drain region 13 that isconnected to a drain terminal D1 (that is only schematicallyillustrated) and a source region arranged distant to the drain region 13in the vertical direction of the semiconductor body 100. The sourceregion is not explicitly shown in FIG. 1. The source region is part of acontrol structure 20 of the power transistor, where this controlstructure 20 is only schematically shown in FIG. 1 and will be explainedin further detail below. The control structure 20 is arranged in aregion of the first surface 101 of the semiconductor body 100, while thedrain region 13 is arranged in the region of the second surface 102 ofthe semiconductor body 100.

According to one embodiment, the semiconductor body 100 includes a firstsemiconductor layer or a semiconductor substrate that forms the drainregion 13 and that forms the second surface 102 of the semiconductorbody 100. In this case, the semiconductor body 100 includes at least onesecond semiconductor layer arranged above the first layer or substrateand including the drift regions 11, the compensation regions 12 and theactive semiconductor regions of the control structure 20. The at leastone second layer can be an epitaxial layer that includes a plurality ofsub-layers that are produced in subsequent method steps.

In FIG. 1, reference character S1 denotes a source terminal of the powertransistor, and reference character G1 denotes a gate terminal of thepower transistor. Examples of the control structure of the powertransistor will be explained with reference to FIGS. 5 and 6 below.

Referring to FIG. 1, the second device region 120 includes a well-likesemiconductor structure 41 of the second doping type, which is thedoping type of the compensation regions 12 in the first device region110. The well-like semiconductor structure 41, which will be referred tosimply as “well” in the following, includes a bottom section 41 ₁extending in a horizontal plane of the semiconductor body 100, andsidewall sections 41 ₂ extending from the bottom section 41 ₁, which isarranged distant to the first surface 101, to the first surface 101. Inthe embodiment illustrated in FIG. 1, the bottom section 41 ₁essentially extends in a horizontal plane of the semiconductor body 100.However, this is only an example. The bottom section 41 ₁ could also becurved, like a bowl. Although, the sidewall sections 41 ₂ of the well 41essentially extend in a vertical direction of the semiconductor body 100in the embodiment of FIG. 1, this is only an example. The sidewallsections 41 ₂ could also extend in a direction that is different fromthe vertical direction to the first surface 101.

Optionally, the well includes a higher doped region 44 in the region ofthe second surface 101. “Higher doped” in this connection means that thesemiconductor region 44 has a higher doping concentration than theremaining sections of the well. The higher doped region 44 is also ofthe second doping type. In the embodiment illustrated in FIG. 1, thehigher doped region 44 extends to the first surface 101. The well-likestructure 41 and, therefore the higher doped region 44, may be floatingor may be connected to a defined electrical potential, such as theelectrical potential at a terminal of a semiconductor device implementedin the well 41. The implementation of devices in the well 41 isexplained below. According to one embodiment explained below, atransistor having a drain terminal D2 is implemented in the well 41. Inthis case, the well 41 and/or the higher doped region 44 may beconnected to the drain terminal D2. When the optional higher dopedregion 44 is omitted, the sidewalls 41 ₂ of the well 41 may extend tothe first surface 101.

The well 41 of the second doping type encloses or surrounds a firstsemiconductor region 42 of the first doping type, which is the dopingtype of the drift region 11 in the first device region 110. In thisfirst semiconductor region 42 active device regions of a furthersemiconductor device 50 are implemented. This further semiconductordevice 50 is only schematically illustrated in FIG. 1. Embodiments ofthis further semiconductor device 50 will be explained with reference toFIGS. 7 to 10 below.

The semiconductor device 50 may be a high voltage device, which is asemiconductor device with a voltage blocking capability of several 10Vor even several 100V, dependent on the specific implementation. Thevoltage blocking capability of the high voltage device may correspond tothe voltage blocking capability of the power device. However, the highvoltage device may be implemented to have a much lower current bearingcapability or a much higher on-resistance than the power transistor.

Optionally, a second semiconductor region 43 of the first doping type isarranged between the well 41 and the first semiconductor region 42. Inthe embodiment illustrated in FIG. 1, this second semiconductor region43 adjoins the well 41 and extends along the bottom section 41 ₁ and thesidewall sections 41 ₂ of the well 41. According to a furtherembodiment, the second semiconductor region 43 only extends only alongthe bottom section 41 ₁ of the well 41.

The doping concentration of the well 41 may correspond to the dopingconcentration of the compensation regions 12. The doping concentrationof these compensation regions 12 is, for example, in the range ofbetween 10¹³ cm⁻³ and 10¹⁷ cm⁻³. The doping concentration of the secondsemiconductor region 43 may correspond to the doping concentration ofthe drift regions 11, where the doping concentration of the driftregions 11 may correspond to the doping concentration of thecompensation regions 12. The doping concentration of the firstsemiconductor region 42 is lower than the doping concentration of thesecond semiconductor region 43. For example, the doping concentration ofthe second semiconductor region 43 is between intrinsic and 2·10¹⁴ cm⁻³or between 10¹³ cm⁻³ and 2·10¹⁴ cm⁻³.

The drift regions 11 and the compensation regions 12 can be producedusing conventional method steps for producing the drift regions andcompensation regions of a superjunction transistor. The well 41, theoptional second semiconductor region 43 and the first semiconductorregion 41 can be produced together with the drift regions 11 and thecompensation regions 12 in the same method steps. This will be explainedin the following. The method for producing the drift regions 11, thecompensation regions 12, the well 41, the optional second semiconductorregion 43 and the first semiconductor region 42 includes epitaxiallygrowing a plurality of epitaxial layers on a semiconductor substratethat forms the drain region 13. These epitaxial layers form thesub-layers of the second semiconductor layer explained before. Accordingto one embodiment, the individual epitaxial layers are grown with abasic doping concentration of the first doping type. In order to formthe drift regions 11 and the compensation regions 12 dopant atoms areimplanted into the individual epitaxial layers, where in each epitaxiallayer sections of the individual drift regions 11 and sections of theindividual compensation regions 12 are formed. The well 41 can be formedin an equivalent manner, by implanting dopant atoms into the individualepitaxial layers at those positions at which sections of the well 41 areto be formed. According to one embodiment, the bottom section 41 ₁ ofthe well 41 is formed in one epitaxial layer, wherein the sidewallsections 41 ₂ have a plurality of sections arranged one above anotherand each formed in one epitaxial layer. The optional secondsemiconductor region 43 can be formed in the same way as the well 41. Abottom section of the second semiconductor region 43, which is a sectionadjoining the bottom section 41 ₁ of the well 41, is, for example,formed in an epitaxial layer that is produced immediately after theepitaxial layer in which the bottom section 41 ₁ of the well 41 isformed.

The doping concentration of the first semiconductor region 42 maycorrespond to the basic doping of the epitaxial layers. In this case,the first semiconductor region 42 is formed by those regions of theindividual epitaxial layers in which no additional dopant atoms areimplanted.

The bottom section 41 ₁ of the well 41 can be formed in a firstepitaxial layer grown on the substrate forming the drain region 13. Inthis case, the well 41 adjoins the drain region 13. The compensationregions 12 may adjoin the drain region 13. In this case, sections of thecompensation regions 13 are already formed in the first epitaxial layergrown on the substrate. According to a further embodiment, thecompensation regions 12 are distant to the drain region 13 in thevertical direction of the semiconductor body 100. In this case, sectionsof the compensation regions 12 are, for example, formed in the secondepitaxial layer for the first time. Optionally, a semiconductor region14 of the first doping type is arranged between the compensation region32 and the drain region 13, so as to separate the compensation regions32 from the drain region 13. The doping concentration of thissemiconductor region 14 may correspond to the doping concentration ofthe drift region 31 or may be slightly lower (such as between 0 and 5%or between 0 and 10% lower) or slightly higher (such as between 0 and 5%or between 0 and 10% higher). Referring to FIG. 1, the semiconductorregion 14 may be implemented as a horizontal semiconductor layer whichis also arranged between the drift region 31 and the drain region 13 andthe well 41 and the drain region 13.

Referring to FIG. 1, the second device region 120 is arranged distant tothe first device region 110 in a lateral direction of the semiconductorbody 100. An intermediate region 130 is formed between the first deviceregion 110 and the second device region 120. The intermediate region 130can be considered as edge region of the power transistor and includesfirst edge regions 31 of the first doping type and second edge regions32 of the second doping type, wherein each first edge region 31 adjoinsat least one second edge region 32. The doping concentrations of thefirst edge regions 31 may correspond to the doping concentrations of thedrift regions 11, and the doping concentrations of the second edgeregions 32 may correspond to the doping concentrations of thecompensation regions 12. The edge regions 31, 32 can be formed by thesame method steps as the drift region 11 and the compensation regions 12as well as the well 41, the optional second semiconductor region 43 andthe first semiconductor region 42. Like the drift regions 11 and thecompensation regions 12, the first and second edge regions 31, 32 extendin a vertical direction of the semiconductor body 100. In the embodimentillustrated in FIG. 1, these edge regions 31, 32 extend to the firstsurface 101 of the semiconductor body 100. In the vertical direction theedge regions 31, 32 may extend as deep into the semiconductor body 100as the drift regions 11 and the compensation regions 12.

FIG. 2 illustrates a horizontal cross sectional view of thesemiconductor body 100. In the embodiment illustrated in FIG. 2, thedrift regions 11 and the compensation regions 12 have a stripe-like(elongated) or wall-like geometry, which means that they extendlongitudinally in a lateral direction of the semiconductor body 100.Like the drift regions 11 and the compensation regions 12, the first andsecond edge regions 31, 32 also have a stripe-like or wall-likegeometry. However, implementing the compensation regions 12 and thesecond edge regions 32 with a stripe-like or wall-like geometry is onlyan example.

According to a further embodiment illustrated in FIG. 3, thecompensation regions 12 could also have a pillar-like geometry, wherethe individual piles extend in the vertical direction of thesemiconductor body 100. FIG. 3 shows a horizontal cross sectional viewof the semiconductor body 100 in the first device region 110, in whichhorizontal cross sections of the individual compensation regions 12 areillustrated. It is also possible, to have pillar-like and elongatedcompensation in one semiconductor device.

Referring to FIG. 3, which also shows a section of the intermediateregion 130, the second edge regions 32 can be pillar-like regions.However, the geometry of the second edge regions 32 can be independentfrom the geometry of the compensation regions 12. Thus, elongated secondedge regions 32 can be combined with pillar-like compensation regions12, and pillar-like second edge regions 32 can be combined withelongated compensation regions 12. Elongated second edge regions 31 mayextend distant and parallel to sidewalls 41 ₂ of the well (asillustrated in FIG. 2) or may extend distant and perpendicular to thesidewalls 41 ₂ of the well.

FIG. 4 illustrates a vertical cross sectional view of the semiconductorarrangement according to a further embodiment. In this embodiment, thewell 41 adjoins the drain region 13, while the drift regions 11 and thecompensation regions 12, as well as the edge regions 31, 32, areseparated from the drain regions 13 by the semiconductor region 14. Thissemiconductor region 14 has the first doping type and a dopingconcentration that equals the doping concentration of the drift regions11 or may be slightly lower (such as between 0 and 5% or between 0 and10% lower) or slightly higher (such as between 0 and 5% or between 0 and10% higher) than the doping concentration of the drift regions 11. Thedoping concentration of the semiconductor region 14 may correspond tothe basic doping concentration of the epitaxial layer in which it isformed or may be higher than the basic doping. According to oneembodiment, the doping concentration of the semiconductor region 14 isabout 2·10¹⁵ cm⁻³. A length (thickness) of the semiconductor region 14,which is its dimension in the vertical direction of the semiconductorbody 100, may correspond to the thickness of one of the epitaxiallayers, namely the first epitaxial layer in which the semiconductorregion 14 is formed.

The well 41 enclosing or surrounding the first semiconductor region 42in which the further semiconductor device 50 is implemented, shields orprotects the further semiconductor device 50 from electrical potentialthat may occur in the active semiconductor regions of the powertransistor, where the active semiconductor regions of the powertransistor are the drain regions 13, the drift regions 11, thecompensation regions 12 and source and body regions (not shown in FIGS.1 and 4) in the control structure 20.

The shielding effect of the well 41 is explained in the following. Forexplanation purposes, it is assumed that the power transistor is ann-type transistor, in which the drain region 13 and the drift regions 11are n-type or n-doped regions, while the compensation regions 12 arep-type or p-dope regions. Consequently, the well 41 is p-doped, whilethe first semiconductor region 42 and the optional second semiconductorregion 43 are n-doped. For explanation purposes it is further assumedthat a positive voltage is applied between the drain and sourceterminals D1, S1 of the power transistor when the power transistor is inoperation. This voltage is, for example, in the range of several volts,when the power transistor is in an on-state (switched on), and can be upto several hundred volts when the power transistor is in an off-state(switched off). The maximum voltage is dependent on the voltage blockingcapability of the power transistor. For explanation purposes it isfurther assumed that the electrical potential of the well 41 is equal toor below the electrical potential of the drain region 13. The well 41may be floating or may be connected to the drain terminal D1 or aterminal with a defined electrical potential as explained before.Between the well 41 and the semiconductor regions outside the well 41and adjoining the well, a pn-junction is formed that is reverse biased,so as to prevent a current from outside coming through the well 41 intothe first semiconductor region 42 when the electrical potential outsidethe well 41 is higher than the electrical potential of the well 41.Semiconductor regions adjoining the well 41 and forming a pn-junctionare the drain region 13 or the optional semiconductor region 14 of thefirst doping type arranged between the drain region 13 and the bottomsection 41 ₁ of the well (see FIG. 1), and first edge regions 31adjoining sidewalls 41 ₂ of the well 41. Referring to FIGS. 1 and 4, afirst edge region 31 of the first doping type adjoins the sidewall 41 ₂of the well 41 also on that side of the well 41 facing away from thepower transistor. According to one embodiment, the first edge region 31adjoining the well on a side facing away from the power transistoradjoins an edge of the semiconductor body 100.

FIG. 5 illustrates a vertical cross sectional view of a section of thecontrol structure 20 of the vertical power transistor according to afirst embodiment. Referring to FIG. 5, the control structure 20 includesa plurality of transistor cells which each transistor cell including asource region 21 of the first doping type, which is the doping type ofthe drift regions 11, and a body region 22 of the second doping typearranged between the source region 21 and one drift region 11. Thetransistor cells are connected in parallel by having their sourceregions 21 and their body region 22 electrically connected to a sourceelectrode 25 that forms the source terminal S1 of the power transistor.A gate electrode 23 is arranged adjacent to the body region 22 and isdielectrically insulated from the body region 22 by a gate dielectric24. The gate electrode 23 can be a continuous electrode or may includeseveral gate electrode sections that are electrically connected witheach other. In the embodiment illustrated in FIG. 5, the gate electrode23 is a planar gate electrode arranged above the first surface 101 ofthe semiconductor body 100. The compensation regions 12 adjoin the bodyregions 22 and are, therefore, electrically connected to the sourceterminal S1.

FIG. 6 illustrates a further embodiment of the gate structure. In thisembodiment, the gate electrode 23 or the sections of the gate electrode23 are arranged in trenches extending from the first surface 101 intothe semiconductor body 100. Each trench with one gate electrode 23 orone gate electrode section and one gate dielectric 24 extends throughthe source region 21 and the body region 22 to or into one drift region11. The compensation regions 12 adjoin the body region 22 which iselectrically connected to the source electrode 25 together with thesource regions 21.

The individual transistor cells can be implemented as stripe-liketransistor cells. The geometry of the transistor cells is mainly definedby the geometry of the source and body regions 21, 22. Stripe-liketransistor cells have source regions and body regions 22 extendinglongitudinally in a direction perpendicular to the section planeillustrated in FIGS. 1 and 6. However, the individual transistor cellscould also be implemented as hexagonal transistor cells, or the like.

FIG. 7 illustrates a vertical cross sectional view of the furthersemiconductor device 50 according to a first embodiment. In theembodiment illustrated in FIG. 7, the further semiconductor device 50 isimplemented as a lateral high voltage transistor. This lateral powertransistor includes a source region 51 and a drain region 52 that arearranged distant to each other in a lateral direction of thesemiconductor body 100. The lateral transistor further includes a bodyregion 53 and a drift region 57. The drift region 57 adjoins the drainregion 52 and is arranged between the drain region 52 and the bodyregion 53. The body region 53 is arranged between the drift region 57and the source region 51 and separates the source region 51 from thedrift region 57. A gate electrode 54 is arranged adjacent to the bodyregion 53 and is dielectrically insulated from the body region 53 by agate dielectric 55. The drain region 52 of the lateral transistor isconnected to a further drain terminal D2, the gate electrode 54 isconnected to a further gate electrode G2, and a source electrode 56 thatis electrically connected to the source region 51 and the body region 53is connected to a further source terminal S2. In the embodimentillustrated in FIG. 7, the drift region 57 is formed by a section of thefirst semiconductor region 42, so that the drift region 57 has the samedoping concentration as the first semiconductor region 42. The dopingtype of the drain region 52 corresponds to the doping type of the firstsemiconductor region 42, the doping type of the source region 51corresponds to the doping type of the first semiconductor region 42, andthe body region 53 is doped complementarily. Since the doping type ofthe first semiconductor region 42 corresponds to the doping type of thedrift regions 11 of the power transistor, the conduction type of thelateral transistor corresponds to the conduction type of the powertransistor, so that the lateral transistor is an n-type transistor whenthe power transistor is an n-type transistor, and the lateral transistoris a p-type transistor when the power transistor is a p-type transistor.

The lateral transistor can be implemented as an enhancement transistor.In this case, the body region 53 adjoins the gate dielectric 55, so thatan inversion channel has to be generated in the body region 53 in orderto switch the lateral transistor on. The lateral transistor could alsobe implemented as a depletion transistor. In this case, a channel regionof the same doping type as the source region 51 and the drift region 57is arranged between the body region 53 and the gate dielectric 55 andextends from the source region 51 to the drift region 57. This channelregion is illustrated in dashed lines in FIG. 7.

According to one embodiment, the body region 53 and the source region 51are located in the middle between two sections of the drain region 52that are both connected to the drain terminal D2. In FIG. 7, one ofthese drain region sections is optional and is therefore drawn in dashedlines. According to another embodiment, the drain region 52 has theshape of a ring that surrounds the drift region 57, and the body region53 and the source region 51 in the horizontal plane.

In the lateral transistor according to FIG. 7, the gate electrode 54 isimplemented as a planar gate electrode arranged above the first surface101 of the semiconductor body. However, this is only an example. FIG. 8illustrates a further embodiment of a lateral power transistor arrangedwithin the well 41. In this embodiment, the gate electrode 54 isimplemented as a trench electrode arranged in a trench extending fromthe first surface 101 through the source region 51 and the body region53 to or into the drift region 57. The gate electrode 54 isdielectrically insulated from these device regions of the lateral powertransistor by a gate dielectric 55.

FIG. 9 illustrates a horizontal cross sectional view of an embodiment ofthe further semiconductor device 50 implemented as a lateral powertransistor as illustrated in FIG. 7. Referring to FIG. 9, the lateraltransistor has a channel width w that is mainly defined by a dimensionof the drain region 52 and the source region 51 in a directionperpendicular to a current flow direction in the lateral powertransistor.

In the embodiment illustrated in FIG. 9, the drift region 57 of thelateral power transistor has a doping concentration corresponding to thedoping concentration of the second semiconductor region 43.

FIG. 10 illustrates a horizontal cross sectional view of a lateral powertransistor according to a further embodiment. In this embodiment, thelateral power transistor includes several drift regions 57 extendingbetween the drain region 52 and the body region 53 and compensationregions 58 of a doping type complementary to the doping type of thedrift regions 57 and adjoining the drift regions 57. The drift regions57 can have a higher doping concentration than this first semiconductorregion 42. The second semiconductor region 43 surrounds the activetransistor regions of the lateral power transistor, so that the activetransistor regions do not extend to the well 41.

To implement the semiconductor device in the well 41 as a lateraltransistor is only one of a plurality of different possibilities.According to a further embodiment illustrated in FIG. 11, thesemiconductor device integrated in the well 41 is a lateral diode with afirst emitter region 91, a base region 93, and a second emitter region92. In the embodiment illustrated in FIG. 11, the second emitter region92 is ring-shaped and surrounds the base region 93 and the first emitterregion 91 in the horizontal plane. The base region 93 and the secondemitter region 92 have the same doping type as the second semiconductorregion 43, where the second emitter region 92 is higher doped than thesecond semiconductor region 43. The doping concentration of the baseregion 93 may correspond to the doping concentration of the secondsemiconductor region 43.

FIG. 12 illustrates an electrical circuit diagram of the semiconductorarrangement with the vertical power MOSFET and the lateral powertransistor explained before. The circuit diagram includes twotransistors, namely a first transistor T1 formed by the vertical powertransistor, and a second transistor T2 formed by the lateral powertransistor. As illustrated in dashed lines in FIG. 6, these twotransistors are integrated in a common semiconductor body 100. There aresix terminals available at the semiconductor body 100, namely the drainterminal D1, the source terminal S1 and the gate terminal G1 of thefirst transistor T1, and the drain terminal D2, the source terminal S2and the gate terminal G2 of the lateral transistor T2. Just forillustration purposes it is assumed that the two transistors T1, T2 aren-type enhancement transistors.

FIG. 13 illustrates an electrical circuit diagram of a semiconductorarrangement with a vertical power MOSFET T1, a lateral power transistorT2, and a lateral power diode D. The power diode can be implemented asexplained with reference to FIG. 11. The lateral power transistor T2 andthe lateral power diode D can be integrated in one well 41 or each ofthese devices can be integrated in a separate well 41.

FIG. 14 illustrates a first embodiment of an application circuit inwhich the two transistors T1, T2 integrated in the semiconductor body100 are implemented. The circuit according to FIG. 14 is a half-bridgecircuit with a low-side transistor which is formed by the firsttransistor T1, a high-side transistor T3, and a high-side drive circuit220 including a level-shifter with a level-shifter transistor. Thelevel-shifter transistor is formed by the second transistor T2.Optionally, the level-shifter includes a boot strap diode that can beimplemented by the diode D explained before. In the embodimentillustrated in FIG. 12, the high-side transistor T3 and the low-sidetransistor T1 are both implemented as n-type enhancement MOSFETs.However, this is only an example. These two transistors could also beimplemented as p-type MOSFETs or as complementary MOSFETs. The high-sidetransistor T3 and the low-side transistor T1 each have a load path thatis formed by the drain-source paths of the MOSFETs and a controlterminal that is formed by the gate terminal of the individual MOSFETs.In the embodiment illustrated in FIG. 12, the level-shifter transistorT2 is also implemented as an n-type enhancement MOSFET. However, this isonly an example. The level-shifter transistor could by implemented asany type of transistor that can be integrated in the further dielectricwell 50.

The load paths of the high-side transistor T3 and the low-sidetransistor T1 are connected in series between terminals for a positivesupply potential +V_(DC) and a negative supply potential or a referencepotential GND, respectively. A circuit node that is common to load pathsof the high-side transistor T3 and the low-side transistor T1 forms anoutput OUT of the half-bridge circuit.

The half-bridge circuit further includes a control circuit 210 thatreceives a first input signal S_(LS) and a second input signal S_(HS).The first input signal S_(LS) defines a desired switching state of thelow-side switch T1, and the second input signal S_(HS) defines a desiredswitching state of the high-side transistor T3. The control circuit 210is configured to generate a first drive signal S_(DRV1) from the firstinput signal S_(LS) and a second drive signal S_(DRV2) from the secondinput signal S_(HS). Alternatively and not shown in FIG. 11 the firstdrive signal S_(DRV1) and the second drive signal S_(DRV2) may begenerated out of only one single input signal, for example by using theinverted input signal and adding certain delay times to prevent low-sideswitch T1 and high-side switch T3 to be in conduction mode at the sametime. While the first drive signal S_(DRV1) is directly received at thegate terminal of the low side transistor T1, a level-shifting of thesignal level of the second drive signal S_(DRV2) is required in order todrive the high-side transistor T3. The first and second drive signalsS_(DRV1), S_(DRV2) may be signals that are referenced to the referencepotential GND. While the low-side transistor T1 can be switched on anoff using the first drive signal S_(DRV1) referenced to the referencepotential GND, a third drive signal S_(DRV3) that is referenced to theelectrical potential at the output terminal OUT of the half-bridgecircuit is required for switching on and off the high-side transistorT3. This drive signal S_(DRV3) is generated by the high-side drivecircuit 220 using the level-shifter transistor T2 that is connectedbetween the high-side drive circuit 220 and the reference potential GND.The level-shifter transistor T2 receives the second drive signalS_(DRV2). The high-side drive circuit 220 is configured to evaluate aswitching state of a level-shifter transistor T2 and to generate thethird drive signal S_(DRV3) dependent on the detected switching state ofthe level-shifter transistor T2. When, for example, the level-shiftertransistor T2 is switched on through the second drive signal S_(DRV2)the high-side drive circuit 220 generates the third drive signalS_(DRV3) so as to switch on the high-side transistor T3. The voltageblocking capability of the level-shifter transistor T2 is about thevoltage blocking capability of the low-side transistor T1, becausedependent on the switching state of the half-bridge circuit, the voltageacross the load path of the level-shifter transistor T2 is about thesame as the voltage across the load path of the low-side transistor T1.

Diode D may, for example, be used as a bootstrap diode to generate asupply voltage of the high-side drive circuit 220 from the supplyvoltage S_(Supp) of the low-side drive circuit 210. When transistor T1is in the on-state, the reference potential of the high-side drivecircuit 220 and of the high-side transistor T3 is close to the referencepotential GND. Lateral power diode D therefore may be in forwardoperation and charging an energy storage (see, e.g., capacitive storageelement 222 in FIG. 11) of high-side driving circuit 220. Whentransistor T1 is in off-state, the reference potential of the high-sidedrive circuit 220 and of the high-side transistor T3 is close to thepositive supply potential +V_(DC), for example. In this operation state,the lateral diode D prevents the energy storage of the high-side circuit220 from being discharged and thus ensures the operation of high-sidecircuit 220.

FIG. 15 illustrates the half-bridge circuit according to FIG. 14,wherein an embodiment of the high-side drive circuit 220 is illustratedin greater detail. In this embodiment, the high-side drive circuit 220includes a drive unit 221 with supply terminals connected to a voltagesource 222, an output terminal coupled to the gate terminal of thehigh-side transistor T3, and an input terminal. Optionally, a gateresistor 224 is connected between the output of the drive unit 221 andthe gate terminal of the high-side transistor T3. In the specificembodiment of FIG. 15, the voltage source 222 is implemented as anenergy storage element, such as a capacitor. A first one of the supplyterminals of the drive unit 221 is connected to a positive supplyterminal of the voltage source 222, while a second supply terminal isconnected to a negative supply terminal of the voltage source 222 and tothe output OUT of the half-bridge circuit. Thus, the electricalpotential at the first supply terminal of the drive unit 221 correspondsto the electrical potential of the output terminal OUT plus the supplyvoltage provided by the voltage source 222.

The voltage source 222 may also be a voltage source other than an energystorage element supplied by a bootstrap diode. In this case, thebootstrap diode D can be omitted or can be used for other purposes inthe circuit.

An impedance 223, such as a resistor, is connected between the firstsupply terminal and the input terminal of the drive unit 221 and isconnected in series with the load path of the level-shifter transistorT2, where the series circuit with the impedance 223 and thelevel-shifter transistor T2 is connected between the positive supplyterminal of the voltage source 222 and reference potential GND. Thedrive unit 221 is configured to evaluate a voltage across the impedance223 and to generate the third drive signal S_(DRV3) dependent on thedetected voltage across the impedance 223, where this voltage isdependent on the switching state of the level-shifter transistor T2.Alternatively and not shown in FIG. 11, an additional impedance may beplaced between impedance 223 and terminal D2 of the level-shiftertransistor T2 to reduce e.g. current values and power losses.

The operating principle of the half-bridge circuit according to FIG. 15is now explained. For explanation purposes it is assumed that both, thelow-side transistor T1 and the high-side transistor T3 are switched offand that in a next step switching on of the high-side transistor T3 isdesired. It is further assumed, that the electrical potential at theoutput OUT is somewhere between the reference potential GND and thepositive supply potential +V_(DC). This potential at the output OUT isdependent on the characteristic of a load (not illustrated) connected tothe output OUT and may, e.g. during turn-off of transistor T1 evenexceed the positive supply potential +V_(DC). Just for explanationpurposes it is assumed that the electrical potential at the output OUTis about 50% of the positive supply potential +V_(DC). The supplypotential +V_(DC) is, for example, in the range of between 300V and600V.

When the level-shifter transistor T2 is switched off, the voltage acrossthe impedance 223 is zero, and the voltage across the level-shiftertransistor T2 corresponds to the electrical potential at the output OUTplus the supply voltage of the voltage source 222. Thus, a voltageblocking capability of the level-shifter transistor T2 is required thatis at least the voltage blocking capability of the low-side transistorT1.

When the second drive signal S_(DRV2) switches the level-shiftertransistor T2 on, a current flows through the impedance 223, so that thevoltage across the impedance 223 increases, where the electricalpotential and the input of the drive unit 223 may even fall below theelectrical potential at the output terminal OUT. According to oneembodiment, the drive unit 221 includes a protection circuit thatprevents the electrical potential at the input of the drive unit 221 tosignificantly drop below the electrical potential at the output OUT.According to one embodiment, a diode or an Avalanche or Zener diode(illustrated in dotted lines) or an arrangement with a plurality ofdiodes and/or Avalanche or Zener diodes connected in series can beconnected between the second supply terminal and the input terminal. Thedrive unit 221 may either evaluate the voltage across the impendence 223or may detect a decrease of the electrical potential at the inputterminal to below the electrical potential at the output OUT, which isthe electrical potential at the second supply terminal of the drive unit221. According to one embodiment, the drive unit 221 generates a signallevel of the drive signal S_(DRV3) that switches the high-sidetransistor T3 on when the electrical potential at the input terminal ofthe drive unit 221 falls below the electrical potential at the secondsupply terminal of the drive unit 221.

Besides a high voltage blocking capability, the level-shifter transistorT2 may also have a high on-resistance, so as to prevent thelevel-shifter transistor T2 from discharging the voltage source 222 andfrom changing the electrical potential at the output terminal OUT.

Spatially relative terms such as “under”, “below”, “lower”, “over”,“upper” and the like, are used for ease of description to explain thepositioning of one element relative to a second element. These terms areintended to encompass different orientations of the device in additionto different orientations than those depicted in the figures. Further,terms such as “first”, “second”, and the like, are also used to describevarious elements, regions, sections, etc. and are also not intended tobe limiting. Like terms refer to like elements throughout thedescription.

As used herein, the terms “having”, “containing”, “including”,“comprising” and the like are open ended terms that indicate thepresence of stated elements or features, but do not preclude additionalelements or features. The articles “a”, “an” and “the” are intended toinclude the plural as well as the singular, unless the context clearlyindicates otherwise.

With the above range of variations and applications in mind, it shouldbe understood that the present invention is not limited by the foregoingdescription, nor is it limited by the accompanying drawings. Instead,the present invention is limited only by the following claims and theirlegal equivalents.

What is claimed is:
 1. A semiconductor arrangement, comprising: asemiconductor body; a power transistor arranged in a first device regionof the semiconductor body and comprising at least one source region, adrain region, and at least one body region, at least one drift region ofa first doping type and at least one compensation region of a seconddoping complementary to the first doping type, and a gate electrodearranged adjacent to the at least one body region and dielectricallyinsulated from the body region by a gate dielectric; and a furthersemiconductor device arranged in a second device region of thesemiconductor body, the second device region comprising a well-likestructure of the second doping type surrounding a first semiconductorregion of the first doping type, the further semiconductor devicecomprising device regions arranged in the first semiconductor region. 2.The semiconductor arrangement of claim 1, further comprising a secondsemiconductor region of the first doping type having a higher dopingconcentration than the first semiconductor region and arranged betweenthe well-like structure and the first semiconductor region.
 3. Thesemiconductor arrangement of claim 2, wherein the well-like structurecomprises a bottom section and sidewall sections, and wherein the secondsemiconductor region is only arranged between the bottom section of thewell-like structure and the first semiconductor region.
 4. Thesemiconductor arrangement of claim 1, wherein the second device regionis arranged distant to the first device region in a lateral direction ofthe semiconductor body.
 5. The semiconductor arrangement of claim 4,wherein an edge region is arranged between the first device region andthe second device region, the edge region comprising a plurality offirst edge regions of the first doping type extending in a verticaldirection of the semiconductor body and a plurality of second edgeregions of the second doping type extending in a vertical direction ofthe semiconductor body, each first edge region adjoining at least onesecond edge region.
 6. The semiconductor arrangement of claim 1, whereinthe semiconductor body comprises a first surface, and wherein thewell-like structure extends to the first surface and comprises in theregion of the first surface a section doped higher than remainingsections of the well-like structure.
 7. The semiconductor arrangement ofclaim 1, wherein the power transistor comprises a plurality oftransistors cells each comprising a source region, a body region, adrift region and a compensation region and having the drain region incommon.
 8. The semiconductor arrangement of claim 1, wherein thesemiconductor body further comprises: a first semiconductor layerforming the drain region; and a second semiconductor layer arrangedabove the first semiconductor layer, the second semiconductor layercomprising the second device region and the at least one drift region,the at least one compensation region, the at least one source region andthe at least one body region of the power transistor.
 9. Thesemiconductor arrangement of claim 1, wherein the further semiconductordevice is implemented as a lateral power transistor.
 10. Thesemiconductor arrangement of claim 9, wherein the lateral powertransistor comprises: a further source region and a further drain regionarranged in the first semiconductor region and distant in a lateraldirection of the semiconductor body; at least one further drift regionand a further body region, wherein the further body region is arrangedbetween the further source region and the at least one further driftregion, and the at least one further drift region is arranged betweenthe further body region and the further drain region; and a further gateelectrode arranged adjacent to the further body region anddielectrically insulated from the further body region by a further gatedielectric.
 11. The semiconductor arrangement of claim 10, wherein apart of the first semiconductor region forms the at least one furtherdrift region.
 12. The semiconductor arrangement of claim 10, wherein thelateral power transistor further comprises at least one compensationregion of a doping type complementary to the doping type of the at leastone drift region and adjoining the at least one drift region.
 13. Thesemiconductor arrangement of claim 12, wherein the at least onecompensation region of the lateral power transistor is connected to thefurther body region or the further source region.
 14. The semiconductorarrangement of claim 12, wherein the at least one further drift regionis of the same doping type as the first semiconductor region and has ahigher doping concentration.
 15. The semiconductor arrangement of claim10, wherein the further device region is arranged between the firstdevice region and an edge of the semiconductor body, wherein the furtherdrain region is arranged closer to the edge of the semiconductor bodythan the further source region.
 16. A half-bridge circuit, comprising: alow-side transistor and a high-side transistor each comprising a loadpath and a control terminal; a high-side drive circuit comprising alevel shifter with a level shifter transistor; and wherein the low-sidetransistor and the level shifter transistor are integrated in a commonsemiconductor body.
 17. The half-bridge circuit of claim 16, wherein thelow side transistor is arranged in a first device region of thesemiconductor body and comprises at least one source region, a drainregion, and at least one body region, at least one drift region of afirst doping type and at least one compensation region of a seconddoping complementary to the first doping type, and a gate electrodearranged adjacent to the at least one body region and dielectricallyinsulated from the body region by a gate dielectric; and wherein thelevel-shifter transistor is arranged in a second device region of thesemiconductor body, the second device region comprising a well-likestructure of the second doping type surrounding a first semiconductorregion of the first doping type, the further semiconductor devicecomprising device regions arranged in first semiconductor region. 18.The half-bridge circuit of claim 16, further comprising a diodeintegrated in the common semiconductor body.
 19. The half-bridge circuitof claim 17, further comprising in the semiconductor body a secondsemiconductor region of the first doping type having a higher dopingconcentration than the first semiconductor region and arranged betweenthe well-like structure and the first semiconductor region.
 20. Thehalf-bridge circuit of claim 17, wherein the well-like structurecomprises a bottom section and sidewall sections, and wherein the secondsemiconductor region is only arranged between the bottom section of thewell-like structure and the first semiconductor region.
 21. Thehalf-bridge circuit of claim 17, wherein the second device region isarranged distant to the first device region in a lateral direction ofthe semiconductor body.
 22. The half-bridge circuit of claim 21, whereinan edge region is arranged between the first device region and thesecond device region, the edge region comprising a plurality of firstedge regions of the first doping type extending in a vertical directionof the semiconductor body, and a plurality of second edge regions of thesecond doping type extending in a vertical direction of thesemiconductor body, each first edge region adjoining at least one secondedge region.
 23. The half-bridge circuit of claim 17, wherein thesemiconductor body comprises a first surface, and wherein the well-likestructure extends to the first surface and comprises in the region ofthe first surface a section doped higher than remaining sections of thewell-like structure.
 24. The half-bridge circuit of claim 17, whereinthe low-side transistor comprises a plurality of transistors cells eachcomprising a source region, a body region, a drift region and acompensation region and having the drain region in common.
 25. Thehalf-bridge circuit of claim 17, wherein the semiconductor body furthercomprises: a first semiconductor layer forming the drain region; and asecond semiconductor layer arranged above the first semiconductor layer,the second semiconductor layer comprising the second device region andthe at least one drift region, the at least one compensation region, theat least one source region and the at least one body region of the powertransistor.
 26. The half-bridge circuit of claim 17, wherein thelevel-shifter transistor is implemented as a lateral high voltagetransistor.
 27. The half-bridge circuit of claim 26, wherein the lateralhigh-voltage transistor comprises: a further source region and a furtherdrain region arranged in the first semiconductor region and distant in alateral direction of the semiconductor body; at least one further driftregion and a further body region, wherein the further body region isarranged between the further source region and the at least one furtherdrift region, and the at least one further drift region is arrangedbetween the further body region and the further drain region; and afurther gate electrode arranged adjacent to the further body region anddielectrically insulated from the further body region by a further gatedielectric.
 28. The half-bridge circuit of claim 27, wherein a part ofthe first semiconductor region forms the at least one further driftregion.
 29. The half-bridge circuit of claim 27, wherein the lateralhigh voltage transistor further comprises at least one compensationregion of a doping type complementary to the doping type of the at leastone drift region and adjoining the at least one drift region.
 30. Thehalf-bridge circuit of claim 29, wherein the at least one compensationregion of the lateral high voltage transistor is connected to thefurther body region or the further source region.
 31. The half-bridgecircuit of claim 29, wherein the at least one further drift region is ofthe same doping type as the first semiconductor region and has a higherdoping concentration.
 32. The half-bridge circuit of claim 29, whereinthe further device region is arranged between the first device regionand an edge of the semiconductor body, wherein the further drain regionis arranged closer to the edge of the semiconductor body than thefurther source region.